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Key Specifications
Part Number Description Status SubFamily Transient Standards P (W) at 8/20 usec VRWM MAX (V) IR MAX at VRWM uA at 25°C VBR MIN (V) VPT MIN (V) CTOT MAX (pF) L-G at VR = 0V Lines: Uni-directional Protection Lines: Bi-directional Protection Pin/Package EV Kit Available?
UESD6V8L1F Low Capacitance Single Line ESD Protection Diode Array ACTIVE General Purpose Protection IEC 61000-4-2 55 5 0.1 6 20 1 0 2/DFN 1.0×0.6
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Product Description

The UESD6V8L1F ESD protection diode is designed to replace multilayer varistors (MLVs) in portable applications such as cell phones, notebook computers, and PDA’s. They feature large cross-sectional area junctions for conducting high transient currents, offer desirable electrical characteristics for board level protection, such as fast response time, lower operating voltage, lower clamping voltage and no device degradation when compared to MLVs. 
The UESD6V8L1F ESD protection diode protects sensitive semiconductor components from damage or upset due to electrostatic discharge (ESD) and other voltage induced transient events. The UESD6V8L1F is available in a DFN2 1.0×0.6 (Compatible with SOD882) package with working voltages of 5 volt. 
It gives designer the flexibility to protect one unidirectional line in applications where arrays are not practical. Additionally, it may be “sprinkled” around the board in applications where board space is at a premium. It may be used to meet the ESD immunity requirements of IEC 61000-4-2, Level 4 (±15kV air, ±8kV contact discharge).
UESD6V8L1F is fabricated using dual diffusion technology offer low junction capacitance (20pF), which is required in high speed signal protection application.
 
Features
 
- Transient Protection for Data Lines to
  IEC 61000-4-2 (ESD) ±15kV (Air), ±8kV (Contact)
- Small Package for Use in Portable Electronics
- Suitable Replacement for MLV’s in ESD Protection Applications
- Protect One I/O or Power Line
- Low Clamping Voltage
- Stand-off Voltages: 5V
- Low Leakage Current
- Solid-State Silicon-Avalanche Technology
- Small Body Outline Dimensions: 1.0mm×0.6mm
 
Applications
 
- Cell Phone Handsets and Accessories
- Personal Digital Assistants (PDA’s)
- Notebooks, Desktops and Servers
- Portable Instrumentation
- Cordless Phones
- Digital Cameras
- Peripherals
- MP3 Players
 
Pin Configurations  

 
 
Electrical Characteristics
(T=25°C, Device for 5.0V Reverse Stand-off Voltage)
 
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Reverse Stand-Off Voltage
VRWM
 
 
 
5
V
Reverse Breakdown Voltage
VBR
IT=1mA
6
6.8
7.2
V
Reverse Leakage Current
IR
VRWM=5V, T=25°C
 
 
0.1
μA
Clamping Voltage
VC
IPP=1A, tP=8/20μs
 
 
7
V
IPP=2A, tP=8/20μs
 
 
8
IPP=5A, tP=8/20μs
 
 
10.8
Forward Voltage
VF
IF=10mA
 
0.8
 
V
Junction Capacitance
CJ
VR=0V, f=1MHz
 
17
20
pF
Junction Capacitance
CJ
VR=2.5V, f=1MHz
 
8
10
pF
  
Ordering Information

Part Number  
Working Voltage
Packaging Type
Channel
Marking Code
Shipping Qty
UESD6V8L1F
5.0V
DFN2 1.0×0.6
1
E2
5000pcs/7Inch
Tape & Reel
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