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" /> UM8517P6-小信号和功率MOSFET-分立器件-英联产品-英联
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UM8517P6
采用SOT363封装的20V P沟道功率MOSFET
Datasheet Reliability Report Package Information Order Sample  
Key Specifications
Part Number Description Status Channel VDS(V) VGS(V) RDS(ON)@4.5V(Ω) Qg@4.5V(nC) ID Max.(A) PD Max.(W) VGS(th) Min.(V) Pin/Package EV Kit Available?
UM8517P6 采用SOT363封装的20V P沟道功率MOSFET ACTIVE P -20 12 0.11 3.3 -2.8 1 -0.4 3/SOT363 N
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Product Description
 
The UM8517P6 is a low threshold P-channel MOSFET, having extremely low on-resistance. This benefit provides the designer with an extremely efficient device for use in battery and load management applications. The device uses a space-saving, small-outline SOT363 package.
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Features
 
- Drain-Source Voltage (Max): -20V
- Low On-Resistance:
  90mΩ@VGS=-4.5V
  130mΩ@VGS=-2.5V
- Continuous Drain Current (Max): -1.4A@25°C
 
Applications
 
- Battery Packs
- Battery-Powered Portable Equipments
- Cellular and Cordless Telephones
 
Pin Configurations

               
 
Ordering Information

Part Number
Packaging Type
Marking Code
Shipping Qty
UM8517P6
SOT363
U6B
3000pcs/7 Inch
Tape & Reel
  
Application Notes
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Low-Icct Analog Switches for Ultra-Portable Designs.pdf
Selecting the Right CMOS Analog Switch.pdf 未填写
Product Selection Guide
ESD Protection and EMI Filters Selection Guide.pdf
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