首页 > 英联产品 > 分立器件 > TVS二极管阵列 > 高、中工作电压二极管阵列
UESD16V8S4C
12V四线ESD保护二极管阵列
Datasheet Reliability Report Package Information Order Sample  
Key Specifications
Part Number Description Status SubFamily Transient Standards P (W) at 8/20 usec VRWM MAX (V) IR MAX at VRWM uA at 25°C VBR MIN (V) VPT MIN (V) CTOT MAX (pF) L-G at VR = 0V Lines: Uni-directional Protection Lines: Bi-directional Protection Pin/Package EV Kit Available?
UESD16V8S4C 12V四线ESD保护二极管阵列 ACTIVE High & Medium Working Voltage IEC 61000-4-2 140 12 0.5 16 30 4 0 6/SOT23
View All>>

Product Description

The UESD16V8S4C of TVS diode array is designed to protect sensitive electronics from damage or latch-up due to ESD, for high voltage applications where board space is at a premium. It is unidirectional device and may be used on lines where the signal polarities are above ground, each device will protect up to four lines. 
TVS diodes are solid-state devices feature large cross-sectional area junctions for conducting high transient currents, specifically for transient suppression. It offers desirable characteristics for board level protection including fast response time, low operating, low clamping voltage, and no device degradation.
The UESD16V8S4C may be used to meet the immunity requirements of IEC 61000-4-2, level 4. The small package makes them ideal for use in portable electronics such as cell phones, PDA’s, notebook computers, and digital cameras.
 
Features
 
- Transient Protection for Data & Power Lines to IEC 61000-4-2 (ESD) ±15kV (Air), ±8kV (Contact)
- Protect Four I/O Lines
- Ultra-Small SOT23-6 Package
- Working Voltage: 12V
- Low Leakage Current
- Low Operating and Clamping Voltage
- Solid-State Silicon Avalanche Technology
 
Applications
 
- Cellular Handsets & Accessories
- Telecom Equipment
- Notebooks & Handhelds
- Portable Instrumentation
- Industrial PC
- Industrial Automation
 
Pin Configurations  

 

Electrical Characteristics
(T=25°C, Device for 12.0V Reverse Stand-Off Voltage)
 
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Reverse Stand-Off Voltage
VRWM
 
 
 
12
V
Reverse Breakdown Voltage
VBR
IT=1mA
16
 
18
V
Reverse Leakage Current
IR
VRWM=12V, T=25°C
 
 
0.5
μA
Clamping Voltage
VC
IPP=5.9A, tp=8/20μs
 
 
23
V
Junction Capacitance
CJ
VR=0V, f=1MHz
 
20
30
pF
  
Ordering Information

Part Number  
Working Voltage
Packaging Type
Channel
Marking Code
Shipping Qty
UESD16V8S4C
12.0V
SOT23-6
4
UCN
3000pcs/7Inch
Tape & Reel
 
Application Notes
微处理器超长启动周期中的外部看门狗管理方案v2.pdf
利用3.3V供电RS485接口实现远距离数据通信.pdf
高速低电源电压逻辑电平转换电路.pdf
超低功耗LDO线性稳压器.pdf
I2C-BUS电平转换芯片在安防产品的应用.pdf
0201超小封装ESD保护器件.pdf
Analog Switch Permits Port Sharing in Portable Equipment.pdf
Balanced Modulator Demodulator Employing UM4684.pdf
Level Shifter for High Speed and Wide Voltage Range Interface.pdf
Low Resistance Analog Switches Permit Speaker Switching in Audio Devices.pdf
Low-Icct Analog Switches for Ultra-Portable Designs.pdf
Selecting the Right CMOS Analog Switch.pdf
Product Selection Guide
ESD Protection and EMI Filters Selection Guide.pdf
Product Search
Parametric Search
Product You Recently Viewed
@2014 Union Semiconductor Limited. All rights Reserved.
FOLLOW US