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UESD6V8L4B
4线低电容ESD保护二极管阵列
Datasheet Reliability Report Package Information Order Sample  
Key Specifications
Part Number Description Status SubFamily Transient Standards P (W) at 8/20 usec VRWM MAX (V) IR MAX at VRWM uA at 25°C VBR MIN (V) VPT MIN (V) CTOT MAX (pF) L-G at VR = 0V Lines: Uni-directional Protection Lines: Bi-directional Protection Pin/Package EV Kit Available?
UESD6V8L4B 4线低电容ESD保护二极管阵列 ACTIVE General Purpose Protection IEC 61000-4-2 55 5 0.1 6 25 4 0 5/SOT553
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Product Description  

The UESD6V8Lxx of TVS diode array is designed to protect sensitive electronics from damage or latch-up due to ESD, for use in applications where board space is at a premium. It is unidirectional device and may be used on lines where the signal polarities are above ground. UESD6V8L4A and UESD6V8L4B protect up to four lines while UESD6V8L5A6 and UESD6V8L5B will protect up to five lines. TVS diodes are solid-state devices feature large cross-sectional area junctions for conducting high transient currents, specifically for transient suppression. It offers desirable characteristics for board level protection including fast response time, low operating, low clamping voltage, and no device degradation. The UESD6V8Lxx may be used to meet the immunity requirements of IEC 61000-4-2, level 4. The small package makes them ideal for use in portable electronics such as cell phones, PDA’s, notebook computers, and digital cameras. The UESD6V8Lxx is fabricated using dual diffusion technology, offer low junction capacitance (20pF), which is required in high speed signal protection application.
 
Features
 
- Transient Protection for Data Lines to
  IEC 61000-4-2 (ESD) ±15kV (Air), ±8kV (Contact)
- Ultra-small Package
- Working Voltage: 5V
- Low Leakage Current
- Low Clamping Voltage
- Solid-state Silicon Avalanche Technology
 
Applications
 
- Cellular Handsets & Accessories
- Cordless Phones
- Personal Digital Assistants (PDA’s)
- Notebooks & Handhelds
- Portable Instrumentation
- Digital Cameras
- Peripherals
- MP3 Players
 
Pin Configurations  

 
              UESD6V8L4B
 
Electrical Characteristics

Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Reverse Stand-Off Voltage
VRWM
 
 
 
5
V
Reverse Breakdown Voltage
VBR
IT=1mA
6
6.8
7.2
V
Reverse Leakage Current
IR
VRWM=5V, T=25°C
 
0.005
0.1
μA
Clamping Voltage
VC
IPP=1A, tP=8/20μs
 
 
6
V
IPP=2A, tP=8/20μs
 
 
8
IPP=5A, tP=8/20μs
 
 
10.8
Junction Capacitance
CJ
Pin 1, 3, 4, 5, 6 to 2
VR=0V, f=1MHz
 
20
25
pF
Junction Capacitance
CJ
Pin 1, 3, 4, 5, 6 to 2
VR=2.5V, f=1MHz
 
12
17
pF
 
Ordering Information

Part Number
Working Voltage
Packaging Type
Channel
Marking Code
Shipping Qty
UESD6V8L4B
5.0V
SC89-5/
SOT553/
SOT665
4
USB
3000pcs/7Inch
Tape & Reel
  
Application Notes
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Product Selection Guide
ESD Protection and EMI Filters Selection Guide.pdf
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